The rapid development of 3D non-volatile storage field, can Chinese manufacturers win a place?
3D Non-Volatile Memory
The rapid development of 3D non-volatile storage field, can Chinese manufacturers win a place?
In the giant emerging markets, the 3D NAND flash memory devices with rapidly changing patent competition are typically represented by 3D V-NAND-32L from Samsung Electronics in 2015 and SK Hynix 3D NAND from 2016 thereafter. V2-36L, Toshiba/SanDisk 3D NAND-48L and Micron/Intel 3D NAND-32L.
3D NVM Main Product Roadmap In the near term, 3D non-volatile storage (NVM) moves frequently, such as Western Digital’s acquisition of SanDisk, Chinese government’s aggressive investment in storage, and Intel’s announcement of Micron/Intel’s Cooperation will separate ways to further develop 3D NAND. We have confirmed the development of these industries from industrial patent applications. Chinese manufacturers (YMTC/YRST) applied for a large number of patents related to 3D NVM in this field in the near future. Samsung has been publicly disclosed in China, the United States, and South Korea in recent months. A large number of patents reflect its intention to further strengthen its patent position in the field of 3D NVM. In addition, we also noticed that NPE (Non-patent Implementing Body) institutions such as Conversant IP and WiLAN are actively entering this field. The involvement of these NPE agencies marks the prosperity of the market. When they are ready to use their patents to make money one day, they will provoke a patent war in the future. In this report, KnowMade, a wholly-owned subsidiary of Yole, analyzes in depth the global patents related to 3D NVM, and details the current status and potential trends of patents in this field. SanDisk/Western Digital, Samsung, and Toshiba’s patented layout in the 3D NVM industry is at the forefront of the industry. These vendors have mastered a total of 65% of patents in this area. Western Digital and Toshiba signed an extension agreement until 2029, while Samsung and Western Digital updated a patent cross-licensing agreement to 2024. On the other hand, we also noticed that Chinese manufacturers have begun to show their prominence in the field of 3D NVM patents.
3D NVM Patent Applications Patent applications in the dynamic 3D NVM field began in the 1990s with Toshiba and SanDisk, and the two parties signed a joint investment agreement on flash memory in 1999. In the late 2000s, patent applications related to the development of 3D memory architectures began to appear. They mainly included BiCS (Bit Cost Scalable, SanDisk and Toshiba), TCAT (Terabit Cell Array Transistor, Samsung Electronics), and FG (Floating Gate, SK Hynix). Soon after, Micron Technology also developed the FG architecture. Macronix International developed the SGVC (Single Gate Vertical Channel) architecture in 2015. Since 2008, 3D NVM-related patent applications have continued to grow, and now there are more than 3,400 patent families in this field, totaling more than 9,400 patents. The current status of patents in this area is very complex, including a number of industry giants and Chinese companies that have just entered the field in recent years.
Core Patent Applicant Analysis
This report demonstrates the strength of their patent status through indicators such as the number of patents of top-level patent applicants, patent citation networks, patent application countries, and current legal status. Through in-depth patent analysis, this report provides a patent overview of six major manufacturers (SanDisk/Western Digital, Micron Technology, SK Hynix, Toshiba, Samsung, and Macronix International), including its patent dynamics, patent strategies, and 3D NAND products. Detailed analysis of relevant core patents. The 3D NVM patent field includes many large-scale manufacturers. It is difficult for new-entry companies to enter this relatively closed field. However, the successful entry of Chinese companies through financial means may change the further development of 3D NVM technology in the future. It is worth noting that equipment manufacturers such as Applied Materials, Tokyo Electron, and Lam Research also applied for nearly 20 3D NVM-related patents.
Patent leader in 3D NVM (sample blur)
Core Technology Analysis
The more than 3,400 patent families studied in this report have been categorized by storage type and main architecture. This report reveals the patent applicant’s patent strategy and technology choices, and focuses on the major vendors’ patent status based on storage type (Flash, MRAM, ReRAM, PCRAM) and architecture (vertical, Xpoint). Some vendors (such as Micron Technology) mainly focus on one type of storage for PCRAM, and we expect that they are also developing 3D Xpoint storage. Other vendors, such as SanDisk, involve multiple types of 3D NVM storage.
Classifying patents by type of storage (sample publication fuzzification) Focusing on China's huge investment in the storage sector, YMTC/YRST developed last year's 3D NAND 36L last year in an attempt to catch up with major market players. However, we need to find out where the intellectual property rights of Chinese manufacturers come from. This report analyzes the status of patents related to storage in China (including 2D, 3D, DRAM, SRAM, Flash, and emerging storage) to understand the technology and patent development trends owned by Chinese manufacturers, including XMC, YRST, Tsinghua Unigroup, and SMIC. . This report also investigates the status of patent applications for major market players in China, including Samsung, SK Hynix, and Intel.
Patent Database This report also provides an Excel patent database that contains more than 9,400 patents analyzed in this study. The database supports multiple field searches, including patent publication numbers, hyperlinks to original documents, priority dates, patent names, patent summaries, patent applicants, storage types/architecture, and current legal status.
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