Application manufacturers forced the upstream of the cost of silicon-based GaN into a weapon
Recently, Gaogong LED reporter learned from Veeco's official website that on February 28, 2011, South Korea's Samsung Advanced Technology Research Institute (SAIT) has selected Veeco's TurboDisc ® K465iTM MOCVD as its silicon-based GaN power device research equipment.
In this regard, Veeco's executive vice president of compound semiconductor business William J. Miller said: "Veeco was selected as Samsung SAIT to study silicon gallium nitride, and commercialized this technology for mass production of GaN power devices, we believe that A huge strategic R&D victory."
LED application manufacturers force upstream to reduce costs
The latest research report of Nomura Securities reduced the investment rating of LED packaging factory Yiguang (2393) from "neutral" to "subtraction". Nomura pointed out that LED light packaging factories such as Yiguang will be the main victims of LCD panel manufacturers seeking to reduce production costs this year; it is estimated that the revenue growth rate in 2011-12 will be only 12-14%, and the gross profit margin is expected to drop to 20%. -25%.
Silicon GaN is the next step to reduce LED cost
On March 25th, Bridgelux (Purray Optoelectronics), a US investment in VTAF, a subsidiary of TSMC (2330), officially announced that it has achieved the use of GaN-On-Silicon LED technology. 135 lumens per watt. This means that Bridgelux has become the industry's first manufacturer to achieve commercial grade performance in silicon semiconductor substrate LED technology.
According to the Bridgelux study, the performance of silicon-on-silicon LEDs is comparable to the top-of-the-line sapphire substrate LEDs introduced 12 to 24 months ago. It is estimated that in the next two to three years, GaN-on-silicon LED products used in the commercial market will be available for sale.
At the same time, Bridgelux also believes that the cost of LED epitaxial products is expected to be greater if existing gallium nitride is formed on larger diameter, lower cost silicon wafers and processes compatible with modern semiconductor production lines. The process is effectively reduced by 75%.
In this regard, Veeco's executive vice president of compound semiconductor business William J. Miller said: "Veeco was selected as Samsung SAIT to study silicon gallium nitride, and commercialized this technology for mass production of GaN power devices, we believe that A huge strategic R&D victory."
LED application manufacturers force upstream to reduce costs
The latest research report of Nomura Securities reduced the investment rating of LED packaging factory Yiguang (2393) from "neutral" to "subtraction". Nomura pointed out that LED light packaging factories such as Yiguang will be the main victims of LCD panel manufacturers seeking to reduce production costs this year; it is estimated that the revenue growth rate in 2011-12 will be only 12-14%, and the gross profit margin is expected to drop to 20%. -25%.
Silicon GaN is the next step to reduce LED cost
On March 25th, Bridgelux (Purray Optoelectronics), a US investment in VTAF, a subsidiary of TSMC (2330), officially announced that it has achieved the use of GaN-On-Silicon LED technology. 135 lumens per watt. This means that Bridgelux has become the industry's first manufacturer to achieve commercial grade performance in silicon semiconductor substrate LED technology.
According to the Bridgelux study, the performance of silicon-on-silicon LEDs is comparable to the top-of-the-line sapphire substrate LEDs introduced 12 to 24 months ago. It is estimated that in the next two to three years, GaN-on-silicon LED products used in the commercial market will be available for sale.
At the same time, Bridgelux also believes that the cost of LED epitaxial products is expected to be greater if existing gallium nitride is formed on larger diameter, lower cost silicon wafers and processes compatible with modern semiconductor production lines. The process is effectively reduced by 75%.
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